Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects
2018; Institute of Electrical and Electronics Engineers; Volume: 8; Issue: 2 Linguagem: Inglês
10.1109/jphotov.2018.2797106
ISSN2156-3381
AutoresJimmy Melskens, Bas W. H. van de Loo, Bart Macco, Lachlan E. Black, Sjoerd Smit, W. M. M. Kessels,
Tópico(s)Semiconductor materials and interfaces
ResumoTo further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce the recombination losses associated with the contacts. Therefore, a contact structure that simultaneously passivates the c-Si surface while selectively extracting only one type of charge carrier (i.e., either electrons or holes) is desired. Realizing such passivating contacts in c-Si solar cells has become an important research objective, and an overview and classification of work to date on this topic is presented here. Using this overview, we discuss the design guidelines for passivating contacts and outline their prospects.
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