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InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

2018; American Institute of Physics; Volume: 123; Issue: 8 Linguagem: Inglês

10.1063/1.5018082

1520-8850

T. W. Kim, Brian R. Albert, Lionel C. Kimerling, Jürgen Michel,

Nanowire Synthesis and Applications

InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2–5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104–3 × 107 cm−2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm−2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ∼0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9–2.4 eV varies from 16.6% to 34.3%.