A comparative study of Ti and Cr based p-ohmic contacts on high power GaAs laser diodes
2018; Elsevier BV; Volume: 152; Linguagem: Inglês
10.1016/j.vacuum.2018.03.006
ISSN1879-2715
AutoresSomna S. Mahajan, Abhishek Sharma, Deepti Jain, Hemant Kumar Saini, Brajesh S. Yadav, Akshay Naik, Alok Jain,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoThe present work involves a comparison of sequentially evaporated Ti/Pt/Au and Cr/Au p-ohmic contacts for high power laser diode fabrication. Subsequently, the contacts were annealed at 440 °C in furnace annealing under N2 ambient and their surfaces were evaluated by optical and electron microscopy. The specific contact resistivity of the contacts was determined by circular transfer length method (c-TLM). Secondary ion mass spectroscopy (SIMS) analysis of the annealed contacts indicates considerable intermixing of the metal and Ga atoms across the interface for Cr/Au contact. On the other hand, insignificant intermixing of atoms was observed in Ti based contacts. The electrical and optical characteristics of the laser diodes formed with Ti/Pt/Au ohmic contact suggest superior performance compared to the diode formed with Cr/Au contact.
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