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Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

2018; Institute of Physics; Volume: 57; Issue: 4S Linguagem: Inglês

10.7567/jjap.57.04fr07

1347-4065

Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki, Masaki Miyazato, Mina Ryo, M. Miyajima, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima, Hajime Okumura,

Semiconductor materials and interfaces

The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm−2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm−2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.