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Time-evolution of the electrical characteristics of MoS 2 field-effect transistors after electron beam irradiation

2018; Royal Society of Chemistry; Volume: 20; Issue: 14 Linguagem: Inglês

10.1039/c8cp00792f

1463-9084

Ming‐Yen Lu, Shang‐Chi Wu, Hsiang‐Chen Wang, Ming‐Pei Lu,

Ferroelectric and Negative Capacitance Devices

The mechanisms of threshold voltage shift evolution of MoS 2 FETs after electron beam irradiation were demonstrated experimentally for the first time.