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A Diamond:H/WO 3 Metal–Oxide–Semiconductor Field-Effect Transistor

2018; Institute of Electrical and Electronics Engineers; Volume: 39; Issue: 4 Linguagem: Inglês

10.1109/led.2018.2808463

1558-0563

Zongyou Yin, Moshe Tordjman, Alon Vardi, R. Kalish, Jesús A. del Alamo,

Semiconductor materials and devices

A p-type Diamond:H/WO 3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO 2 as gate insulator, the Diamond:H/WO 3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO 3 -thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO 3 layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication.