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Spin-torque-driven MTJs with extended free layer for logic applications

2018; Institute of Physics; Volume: 51; Issue: 27 Linguagem: Inglês

10.1088/1361-6463/aac609

ISSN

1361-6463

Autores

Eline Raymenants, Adrien Vaysset, Danny Wan, Johan Swerts, S. Van Beek, Odysseas Zografos, Dmitri E. Nikonov, Sasikanth Manipatruni, Ian A. Young, D. Mocuta, Iuliana Radu, Marc Heyns, Mauricio Manfrini,

Tópico(s)

Ferroelectric and Negative Capacitance Devices

Resumo

The development of low-power spintronic computation would open new paths for advanced logic nodes. It could utilize a ferromagnetic free layer shared by multiple magnetic tunnel junctions to cascade spin-coherent information. The basic component of this device would be a magnetic tunnel junction with an extended free layer. Here, we study the magnetization dynamics of such a system. One or multiple intermediate resistance levels are observed during spin-torque-induced magnetization reversal. Micromagnetic modeling suggests that non-uniform magnetic anisotropy introduced by careful pillar-pattering is a plausible cause of this multi-step reversal.

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