Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS 2 /Au structure for multilevel flexible memory
2018; Royal Society of Chemistry; Volume: 6; Issue: 27 Linguagem: Inglês
10.1039/c8tc01844h
ISSN2050-7534
AutoresXiaoning Zhao, Zeying Fan, Haiyang Xu, Zhongqiang Wang, Jiaqi Xu, Jiangang Ma, Yichun Liu,
Tópico(s)Perovskite Materials and Applications
ResumoA new operating scheme for voltage-polarity-controlled multilevel memory based on Ag/MoS 2 /Au flexible structure with reversible alternation between bipolar and unipolar resistive switching modes was demonstrated.
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