P‐127: Dual‐Gate Self‐Aligned IGZO TFTs Monolithically Integrated with High‐Temperature Bottom Moisture Barrier for Flexible AMOLED
2018; Wiley; Volume: 49; Issue: 1 Linguagem: Inglês
10.1002/sdtp.12311
ISSN2168-0159
AutoresAuke Jisk Kronemeijer, Hylke B. Akkerman, Jan-Laurens van der Steen, Soeren Steudel, Raghu K. Pendyala, Pradeep Panditha, Thijs Bel, Karin van Diesen, Gerard de Haas, Joris Maas, Joris de Riet, Madelon Rovers, Roy Verbeek, Manoj Nag, Lynn Verschueren, Jan Genoe, Wim Dehaene, Ya-Ju Lu, Shin-Chuan Chiang, Yen-Yu Huang, Ming‐Hua Yeh, Gerwin H. Gelinck,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoWe present a 350°C self‐aligned dual‐gate a‐IGZO backplane technology with a monolithically integrated multi‐layer high‐temperature thin‐film barrier for flexible AMOLED. Thin‐film barrier properties and TFT technology are optimized on 320 x 352mm substrates, and demonstrated in a flexible QQVGA 100 ppi AMOLED display prototype.
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