Self-powered data erasing of nanoscale flash memory by triboelectricity
2018; Elsevier BV; Volume: 52; Linguagem: Inglês
10.1016/j.nanoen.2018.07.040
ISSN2211-3282
AutoresIk Kyeong Jin, Jun-Young Park, Byung-Hyun Lee, Seung‐Bae Jeon, Il‐Woong Tcho, Sang-Jae Park, Weon‐Guk Kim, Joon‐Kyu Han, Seung-Wook Lee, Seongyeon Kim, Hagyoul Bae, Daewon Kim, Yang‐Kyu Choi,
Tópico(s)Neuroscience and Neural Engineering
ResumoIrrecoverable data destruction on a mobile device is important to prevent unintentional data disclosure. In this regard, transient electronics, a form of electronics that can be made to disappear or can be destroyed in a controllable manner, has been actively researched. To erase data completely, irreversible reactions such as physical or chemical destruction have been used. However, these techniques either require external voltage or destroy a memory device so that it cannot be reused. Here, we demonstrate a novel self-powered data-erasing method for nanoscale flash memory devices which uses triboelectricity via a kill switch, which consists of a nylon pad connected to a gate electrode of the flash memory. Through a one-time touch of the kill switch by a finger wearing a polytetrafluoroethylene (PTFE) glove, data stored in flash memory is set to the ‘1′ state on the chip scale simultaneously with low-level triboelectricity, allowing the memory to be reused afterward. Moreover, the memory can be permanently destroyed by a single touch of the kill switch with a finger without a glove that generates high-level triboelectricity. These erase methods provide a rapid and convenient means of self-powered irrecoverable data erasing in the era of the Internet of Things (IoT).
Referência(s)