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Compensation and hydrogen passivation of magnesium acceptors in β-Ga2O3

2018; American Institute of Physics; Volume: 113; Issue: 5 Linguagem: Inglês

10.1063/1.5044627

1520-8842

Jacob R. Ritter, Jesse Huso, Peter T. Dickens, Joel B. Varley, Kelvin G. Lynn, Matthew D. McCluskey,

ZnO doping and properties

Magnesium-doped gallium oxide may be utilized as a semi-insulating material for future generations of power devices. Spectroscopy and hybrid functional calculations were used to investigate defect levels in Czochralski-grown β-Ga2O3. Substitutional Mg dopants act as deep acceptors, while substitutional Ir impurities are deep donors. Hydrogen-annealed Ga2O3:Mg shows an IR peak at 3492 cm−1, assigned to an O-H bond-stretching mode of a neutral MgH complex. Despite compensation by Ir and Si and hydrogen passivation, high concentrations of Mg (1019 cm−3) can push the Fermi level to mid-gap or lower.