Progress in single-photon avalanche diode image sensors in standard CMOS: From two-dimensional monolithic to three-dimensional-stacked technology
2018; Institute of Physics; Volume: 57; Issue: 10 Linguagem: Inglês
10.7567/jjap.57.1002a3
ISSN1347-4065
AutoresMyung-Jae Lee, Edoardo Charbon,
Tópico(s)Optical Imaging and Spectroscopy Techniques
ResumoSingle-photon detection and photon counting are useful tools in many fields, from light detection and ranging (LiDAR) to biomedical imaging and from time-resolved Raman spectroscopy to quantum applications. In this context, recently, single-photon avalanche diode (SPAD) sensors in standard CMOS technology have been receiving considerable attention from both scientific and industrial communities since they can provide single-photon detection and photon-counting capabilities along with some functionalities such as time-of-arrival evaluation and histogram processing in a cost-effective manner. In this review, we provide a comprehensive view of the CMOS SPAD technology: from fundamentals to cutting-edge technologies including three-dimensional (3D)-stacked CMOS SPAD sensors.
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