Rapid Improvement in Thin Film Transistors With Atomic-Layer-Deposited InO x Channels via O 2 Plasma Treatment
2018; Institute of Electrical and Electronics Engineers; Volume: 39; Issue: 11 Linguagem: Inglês
10.1109/led.2018.2869019
ISSN1558-0563
AutoresQian Ma, Yan Shao, Y.-P. Wang, Hongbao Zheng, Bao Zhu, Wen-Jun Liu, Shi‐Jin Ding, D. W. Zhang,
Tópico(s)ZnO doping and properties
ResumoTo improve the electrical performance of thin-film transistors with an atomic-layer-deposited Al 2 O 3 dielectric/InO x channel, O 2 plasma surface treatments of the InO x back channel are explored in comparison with thermal annealing. It is demonstrated that the O 2 plasma treatment can enhance the device performance much more efficiently than thermal annealing, exhibiting an extremely low-thermal budget. Furthermore, it is revealed that the plasma treatment at a higher temperature can improve the device performance much faster than that at a lower temperature. For a 4 min O 2 plasma treatment at 200 °C, superior electrical characteristics are achieved, such as a field-effect mobility of 11 cm 2 V -1 s -1 , a threshold voltage of 0.9 V, a subthreshold swing of 0.38 V/dec, and good gate bias stress stabilities. This is ascribed to faster passivation of oxygen vacancies, removal of more C residues, and weaker surface damage and smaller surface roughness of the InO x back channel in comparison with long plasma treatments at lower temperatures.
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