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Gate-induced superconductivity in a monolayer topological insulator

2018; American Association for the Advancement of Science; Volume: 362; Issue: 6417 Linguagem: Inglês

10.1126/science.aar4426

1095-9203

Ebrahim Sajadi, Tauno Palomaki, Zaiyao Fei, Wenjin Zhao, Philip Bement, Christian Olsen, Silvia Luescher, Xiaodong Xu, Joshua Folk, David Cobden,

Electronic and Structural Properties of Oxides

The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic doping, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a just a small gate voltage. This discovery offers new possibilities for gate-controlled devices combining superconductivity and topology, and could provide a basis for quantum information schemes based on topological protection.