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Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs

2018; Institute of Electrical and Electronics Engineers; Volume: 66; Issue: 1 Linguagem: Inglês

10.1109/tns.2018.2877412

1558-1578

Chundong Liang, Rui Ma, K. Li, Yang Su, Huiqi Gong, Kaitlyn L. Ryder, Peng Wang, Andrew L. Sternberg, En Xia Zhang, Michael L. Alles, Robert A. Reed, Steven J. Koester, Daniel M. Fleetwood, Ronald D. Schrimpf,

Graphene research and applications

Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and the bias-dependence of the measured SETs in BP transistors are investigated to study the charge collection mechanisms. The peak drain current is maximized when the pulsed-laser strikes at the center of the channel region. The amplitudes of the SETs are also relatively independent of the overdrive voltage. The drain-to-source SET current increases when $\vert \text {V}_{\mathrm {DS}}\vert $ increases, due to a shunt effect.