Molecular Beam Epitaxy
1995; Elsevier BV; Linguagem: Inglês
10.1016/b978-081551374-2.50005-3
Autores Tópico(s)Quantum Dots Synthesis And Properties
ResumoMolecular beam epitaxy (MBE) is an ultrahigh vacuum (UHV) atomic-layer by atomic-layer crystal growth technique. It is based on reaction of molecular or atomic beams with a heated crystalline substrate. MBE is capable of producing extremely high purity and highly crystalline thin films with precise control over composition, doping, and interfaces in the fraction of nanometer range and in the growth direction with precise lateral uniformity. MBE is widely employed to grow semiconductor, metal, insulator, and ceramic thin films. This chapter highlights the important features of MBE, techniques for investigating the growth mechanism, system components, and their function with emphasis on in-situ real-time monitoring and control, growth mechanisms, growth procedures, ex-situ materials analysis, and the main ingredients which go into bandgap or band structure engineering. The chapter focuses on the III–V compounds because of their technological importance and maturity of the understanding of growth issues. It also discusses variations of MBE.
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