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Oxidation and Strain in Free-standing Silicon Nanocrystals

2019; American Physical Society; Volume: 11; Issue: 2 Linguagem: Inglês

10.1103/physrevapplied.11.024054

2331-7043

Bruno P. Falcão, Joaquim P. Leitão, M.R. Soares, Lídia Ricardo, Hugo Águas, Rodrigo Martins, Rui N. Pereira,

Semiconductor materials and devices

Understanding the effects of surface-related strain is important in developing technologies based on nanoscale forms of silicon. This investigation of physical phenomena related to surface oxidation of free-standing silicon nanocrystals (Si-NCs) reveals strongly surface-dependent lattice strain. The time evolution of natural oxidation in air shows a clear correlation between oxide formation and the appearance of compressive strain in a Si-NC's core. Strain is negligible in H-terminated nanocrystals, but increases continuously as oxidation progresses. These results clarify contradicting results in the literature.