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Near-Surface Analysis of Semicondutor Using Grazing Incidence X-Ray Fluorescence

1987; International Centre for Diffraction Data; Volume: 31; Linguagem: Inglês

10.1154/s0376030800022345

2631-3626

Atsuo Iida, Kenji Sakurai, Yohichi Gohshi,

Surface and Thin Film Phenomena

Summary The X-ray external total reflection was used for the x-ray fluorescence analysis of the near surface layer of a GaAs wafer and a GaAlAs epilayer. Synchrotron radiation was used as an excitation source. The intensity ratio between the Ga K and As K fluorescence signals was measured as a function of the glancing angle. The reduction of As atoms near the surface of less than a hundred Å was observed for the high temperature annealed GaAlAs epilayer.