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Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga 2 O 3 Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio

2019; Wiley; Volume: 15; Issue: 19 Linguagem: Inglês

10.1002/smll.201900580

1613-6829

Zhengyuan Wu, Zhuoxun Jiang, Pengyu Song, Pengfei Tian, Laigui Hu, Ran Liu, Z. Fang, Junyong Kang, Tong‐Yi Zhang,

Advanced Photocatalysis Techniques

Abstract 2D β‐Ga 2 O 3 nanosheets, as fundamental materials, have great potential in next generations of ultraviolet transparent electrodes, high‐temperature gas sensors, solar‐blind photodetectors, and power devices, while their synthesis and growth with high crystalline quality and well‐controlled orientation have not been reported yet. The present study demonstrates how to grow single‐crystalline ultrathin quasi‐hexagonal β‐Ga 2 O 3 nanosheets with nanowire seeds and proposes a hierarchy‐oriented growth mechanism. The hierarchy‐oriented growth is initiated by epitaxial growth of a single‐crystalline β‐Ga 2 O 3 nanowire on a GaN nanocrystal and followed by homoepitaxial growth of quasi‐hexagonal (010) β‐Ga 2 O 3 nanosheets. The undoped 2D (010) β‐Ga 2 O 3 nanosheet field effect transistor has a field‐effect electron mobility of 38 cm 2 V −1 s −1 and an on/off current ratio of 10 7 with an average subthreshold swing of 150 mV dec −1 . The from‐nanowires‐to‐nanosheets technique paves a novel way to fabricate nanosheets, which has great impact on the field of nanomaterial synthesis and growth and the area of nanoelectronics as well.