Relationship between depth of basal-plane dislocations and expanded stacking faults by application of forward current to 4H–SiC p-i-n diodes
2019; Institute of Physics; Volume: 12; Issue: 5 Linguagem: Inglês
10.7567/1882-0786/ab1305
ISSN1882-0786
AutoresShohei Hayashi, Tamotsu Yamashita, Junji Senzaki, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima, Hajime Okumura,
Tópico(s)Advanced ceramic materials synthesis
ResumoThe influence of basal-plane dislocation (BPD) depth on the expansion of single Shockley-type stacking faults (1SSFs) was investigated during the forward-current degradation of 4H–SiC p–i–n diodes. The 1SSF expanded from the BPD converted into a threading edge dislocation (TED) in the substrate. The hole density that was injected into the substrate increased with the stress-current density; therefore, BPDs converted into TEDs at a greater depth caused the expansion of 1SSFs under higher stress-current density.
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