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A substrate integrated cavity‐fed dual‐polarized filtering patch antenna with high isolation

2019; Wiley; Volume: 29; Issue: 9 Linguagem: Inglês

10.1002/mmce.21860

1096-4290

Chun‐Mei Meng, Jian Wang, Jin Shi,

Advanced Antenna and Metasurface Technologies

International Journal of RF and Microwave Computer-Aided EngineeringVolume 29, Issue 9 e21860 RESEARCH ARTICLE A substrate integrated cavity-fed dual-polarized filtering patch antenna with high isolation Chun-Mei Meng, Chun-Mei Meng School of Information Science and Technology, Nantong University, Nantong, Jiangsu, ChinaSearch for more papers by this authorJian Wang, Jian Wang School of Information Science and Technology, Nantong University, Nantong, Jiangsu, ChinaSearch for more papers by this authorJin Shi, Corresponding Author Jin Shi jinshi0601@hotmail.com orcid.org/0000-0002-4019-1548 School of Information Science and Technology, Nantong University, Nantong, Jiangsu, China Research Center for Intelligent Information Technology, Nantong University, Nantong, China Tongke School of Microelectronics, Nantong University, Nantong, Jiangsu, China Correspondence Jin Shi, School of Information Science and Technology, Nantong University, 9 Seyuan Road, Nantong 226019, Jiangsu, China. Email: jinshi0601@hotmail.comSearch for more papers by this author Chun-Mei Meng, Chun-Mei Meng School of Information Science and Technology, Nantong University, Nantong, Jiangsu, ChinaSearch for more papers by this authorJian Wang, Jian Wang School of Information Science and Technology, Nantong University, Nantong, Jiangsu, ChinaSearch for more papers by this authorJin Shi, Corresponding Author Jin Shi jinshi0601@hotmail.com orcid.org/0000-0002-4019-1548 School of Information Science and Technology, Nantong University, Nantong, Jiangsu, China Research Center for Intelligent Information Technology, Nantong University, Nantong, China Tongke School of Microelectronics, Nantong University, Nantong, Jiangsu, China Correspondence Jin Shi, School of Information Science and Technology, Nantong University, 9 Seyuan Road, Nantong 226019, Jiangsu, China. Email: jinshi0601@hotmail.comSearch for more papers by this author First published: 24 May 2019 https://doi.org/10.1002/mmce.21860Citations: 5 Funding information Nantong Science and Technology Plan Project, Grant/Award Number: JC2018130; Natural Science Research Project of Jiangsu Higher Education Institutions, Grant/Award Number: 17KJB510048; Nantong University-Nantong Joint Research Centre for Intelligent Information Technology; Tongke School of Microelectronics, Nantong University Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract This article presents a dual-polarized filtering patch antenna, which uses two orthogonal modes (TE210/TE120) of the substrate integrated cavity (SIC) to couple with two orthogonal modes (TM10/TM01) of the patch by the cross slot, respectively. The second-order filtering response on dual polarizations can be achieved by using just one SIC resonator and one slotted square patch, which display simple structure of the proposed antenna. The slotted square patch provides a new way to obtain same external quality factor of the radiator on dual polarization, which makes the performances on two polarizations agree well with each other when changing the bandwidth. High isolation can be achieved by controlling the space of the vias of the SIC. Radiation nulls can be produced by connecting the coupled lines with the feeding lines in parallel. A prototype with the entire height of 0.019 λ0 (λ0 is the free-space wavelength at center frequency) achieves a 10-dB bandwidth of 1.6%, the gain of 4.9 dBi at the center frequency, the port isolation of 43 dB, and the out-of-band rejection level of 25 dB. Citing Literature Volume29, Issue9Special Issue: Millimeter-Wave Components: Design Techniques to CADSeptember 2019e21860 RelatedInformation