Characterization of 60 mm AlN Single Crystal Wafers Grown by the Physical Vapor Transport Method
2019; Wiley; Volume: 216; Issue: 16 Linguagem: Inglês
10.1002/pssa.201970052
ISSN1862-6319
AutoresQikun Wang, Dan Lei, Guangdong He, Jianchao Gong, Jiali Huang, Jason Wu,
Tópico(s)Acoustic Wave Resonator Technologies
Resumophysica status solidi (a)Volume 216, Issue 16 1970052 Cover PictureFree Access Characterization of 60 mm AlN Single Crystal Wafers Grown by the Physical Vapor Transport Method Qikun Wang, Qikun Wang Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this authorDan Lei, Dan Lei Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this authorGuangdong He, Guangdong He Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this authorJianchao Gong, Jianchao Gong Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this authorJiali Huang, Jiali Huang Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this authorJason Wu, Corresponding Author Jason Wu jason.wu@utrendtech.com Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this author Qikun Wang, Qikun Wang Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this authorDan Lei, Dan Lei Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this authorGuangdong He, Guangdong He Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this authorJianchao Gong, Jianchao Gong Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this authorJiali Huang, Jiali Huang Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this authorJason Wu, Corresponding Author Jason Wu jason.wu@utrendtech.com Ultratrend Technologies Inc., Hangzhou 310000, ChinaSearch for more papers by this author First published: 18 August 2019 https://doi.org/10.1002/pssa.201970052Citations: 1AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract Physical Vapor Transport Crack-free bulk AlN single crystals up to 60 mm in diameter are grown for the first time by the physical vapor transport method. The demonstrated entire wafer exhibits excellent ultraviolet transparency with absorption coefficients of 14–21 cm−1 in the range 260–280 nm, and the Raman spectra show an E2(high) FWHM of 2.86 cm−1. More details can be found in article number 1900118 by Qikun Wang, Jason Wu, and co-workers. Citing Literature Volume216, Issue16August 21, 20191970052 RelatedInformation
Referência(s)