CuInS 2 Films for Photovoltaic Applications Deposited by a Low-Cost Method
2006; American Chemical Society; Volume: 18; Issue: 13 Linguagem: Inglês
10.1021/cm0606631
ISSN1520-5002
AutoresTeodor K. Todorov, Eloísa Cordoncillo, Juan F. Sánchez‐Royo, J. Carda, P. Escribano,
Tópico(s)Copper-based nanomaterials and applications
ResumoWe report an atmospheric-pressure deposition method for preparing well-adhered and compact CuInS2 films. The precursor film is obtained by a solution-coating technique and is subjected to a low-cost and safe one-step reduction−sulfurization treatment. A maximum thickness of 300 nm is achieved per layer, and up to three layers were sulfurized at a time. The obtained films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and visible−near-infrared (vis−NIR) spectrophotometry.
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