Electrical and optical properties of Zr doped β -Ga 2 O 3 single crystals
2019; Institute of Physics; Volume: 12; Issue: 8 Linguagem: Inglês
10.7567/1882-0786/ab2b6c
ISSN1882-0786
AutoresMuad Saleh, Arkka Bhattacharyya, Joel B. Varley, Santosh K. Swain, Jani Jesenovec, Sriram Krishnamoorthy, Kelvin G. Lynn,
Tópico(s)Advanced Photocatalysis Techniques
ResumoSn and Si are the typical dopants for achieving tunable n-type conductivity of β-Ga2O3 single crystals grown from the melt. Here, we explore Zr doping in β-Ga2O3 as assessed with UV–vis-NIR, Hall Effect, I–V, and CV measurements and hybrid functional calculations. Single crystals were grown from the melt with nominal Zr doping between 0.1 and 0.5 at% using Czochralski and vertical gradient freeze methods in Ar + O2. Our results suggest that ZrGa behaves as a shallow donor, with a measured activation energy of ∼10 meV. Our samples show an electron mobility ∼73–112 cm2 V−1 s−1, resistivity ∼0.08–0.01 ohm cm, and carrier density of n = 6.5 × 1017−5 × 1018 cm3 at room temperature.
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