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1.55-μm Lasers Epitaxially Grown on Silicon

2019; IEEE Photonics Society; Volume: 25; Issue: 6 Linguagem: Inglês

10.1109/jstqe.2019.2927579

1558-4542

Bei Shi, Yu Han, Qiang Li, Kei May Lau,

Nanowire Synthesis and Applications

We have developed InP-based 1.55-μm lasers epitaxially grown on (001) Si substrates for photonics integration. To overcome the fundamental material challenges associated with mismatch III-V on Si hetero-epitaxy, a Si V-groove epitaxy platform was established, leading to device quality III-V nanostructures and thin films. Combining metal organic chemical vapor deposition grown 1.55-μm InAs quantum dots (QDs) and the InP/Si thin-film templates, we have achieved electrically driven 1.55-μm QD lasers on Si operating at room temperature. To reduce device footprint and energy consumption, a bufferless integration path by growing InP nano-ridge lasers on prepatterned silicon-on-insulators wafers has been explored. Material and device characterizations and an outlook for device component integration are discussed.