Portal de Periódicos da CAPES

Simultaneous Enhancement of Electrical Performance and Negative Bias Illumination Stability for Low-Temperature Solution-Processed SnO 2 Thin-Film Transistors by Fluorine Incorporation

2019; Institute of Electrical and Electronics Engineers; Volume: 66; Issue: 10 Linguagem: Inglês

10.1109/ted.2019.2936484

1557-9646

Jun Li, You-Hang Zhou, De-Yao Zhong, Xifeng Li, Jianhua Zhang,

Ga2O3 and related materials

In this article, fluorine (F)-doped SnO 2 (FTO) thin-film transistors (TFTs) are fabricated by the solution process with a low process temperature (300 °C). The FTO film characteristic, TFT electrical performance, and stability under the negative bias illumination stress (NBIS) are improved by F doping. The enhancement in electrical performance and stability is because F can substitute oxygen atom in the lattice and oxygen vacancies in FTO system. The FTO TFT with 3 mol.% F doping ratio shows superior electrical performance with saturation mobility (μ) of 14.48 cm 2 /V·s, a threshold voltage (V TH ) of 1.01 V, a subthreshold swing (SS) of 0.19 V/decade, and an ON/OFF current ratio (I on /I off ) of 9.32 × 10 7 . Furthermore, the 3 mol.% FTO TFT shows only -0.8 V V TH shift under NBIS. The total density of states (DOSs) for the FTO TFT is extracted in order to further verify the stability improvement based on the temperature-dependence field-effect measurement. The results indicate that the simple solution-processed FTO-TFT is promising for application in electronics.