Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control
2019; Royal Society of Chemistry; Volume: 11; Issue: 44 Linguagem: Inglês
10.1039/c9nr07995e
ISSN2040-3372
AutoresYajie Yang, Sung Kyu Jang, Haeju Choi, Jiao Xu, Sungjoo Lee,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoFor the realization of two-dimensional material-based high-performance electronic devices, the formation of a stable, high-quality metal-semiconductor contact is a key factor. Platinum diselenide (PtSe2), a group-10 transition metal dichalcogenide, is a promising candidate owing to its unique property of layer-dependent semiconductor-to-semimetal transition. Here, a scalable and controllable method utilizing an inductively coupled plasma treatment is reported for selectively controlling the thickness of PtSe2 flakes. The PtSe2 transforms from a semimetal to a semiconductor when the thickness decreases below 3 nm. A field-effect transistor is fabricated based on the homogeneous platinum diselenide metal/semiconductor coplanar structure (metallic PtSe2 as source/drain electrodes and semiconductor PtSe2 as a channel), which demonstrates a low contact resistance of 362 Ωμm and carrier mobility of 150 cm2 V-1 s-1, outperforming the previously reported PtSe2-based devices.
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