Portal de Periódicos da CAPES

DC and 28 GHz Reliability of a SOI FET Technology

2019; Institute of Electrical and Electronics Engineers; Volume: 8; Linguagem: Inglês

10.1109/jeds.2019.2952449

2168-6734

Edmundo A. Gutiérrez-D, Jairo Mendez-V., J. C. Tinoco, Emmanuel Torres Rios, Oscar V. Huerta-G.,

Semiconductor materials and devices

We introduce experimental results of the I-V degradation characteristics of a Silicon SOI technology for RF applications when stressed under both; a 28 GHz and a DC stress input signals. Then we compare the effect of DC and RF stress on threshold voltage, transconductance, and drain current capability. We observe that reliability under RF stress is gate voltage dependent, and in some cases an improvement (“healing”) of the I-V characteristics is observed. A hypothetical explanation for the degradation/enhancement under RF stress is attributed to a self-heating and self-healing (SH 2 ) mechanism. The degradation mechanism is also simulated, and the reliability model tested, with Cadence.