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Alkali-induced grain boundary reconstruction on Cu(In,Ga)Se2 thin film solar cells using cesium fluoride post deposition treatment

2019; Elsevier BV; Volume: 68; Linguagem: Inglês

10.1016/j.nanoen.2019.104299

2211-3282

Tzu‐Ying Lin, Ishwor Khatri, Junpei Matsuura, Kosuke Shudo, Wei-Chih Huang, Mutsumi Sugiyama, Chih‐Huang Lai, Tokio Nakada,

Semiconductor materials and interfaces

Heavy alkali metal treatment is a key factor to approach high efficiency in Cu(In, Ga)Se2 (CIGS) solar cells. Here, we show that the Cs-induced surface modification on CIGS thin-film solar cells, especially on grain boundary reconstruction generated from cesium fluoride post-deposition treatment (CsF-PDT). The CsInSe2 phase can be synthesized by CsF-PDT process without extra assistant species, and specifically favors grain boundaries (GBs), which was further characterized by FE-EPMA, TEM, and SIMS analysis. The Cs-contained GBs may both create the valence-band downshift and conduction-band upward. By controlling the Cs-contained layer thickness and modifying absorber, the spike at conduction-band can be overcome by tunneling while remaining high valence-band downshift to suppress the GBs recombination. The efficiency was improved from 15.1 to 18.3% after CsF-PDT; the voltage loss of Eg/q–Voc was down below 0.4 V. Those improvements are mainly contributed from the grain boundary reconstruction at the junction area using CsF-PDT to reduce the recombination.