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Excitation Efficiency and Limitations of the Luminescence of Eu 3 + Ions in Ga N

2020; American Physical Society; Volume: 13; Issue: 1 Linguagem: Inglês

10.1103/physrevapplied.13.014044

2331-7043

Dolf Timmerman, Brandon Mitchell, Shuhei Ichikawa, Jun Tatebayashi, Masaaki Ashida, Y. Fujiwara,

Semiconductor materials and devices

The excitation efficiency and external luminescence quantum efficiency of trivalent ${\mathrm{Eu}}^{3+}$ ions doped into gallium nitride ($\mathrm{Ga}\mathrm{N}$) is studied under optical and electrical excitation. For small pump fluences, the excitation of ${\mathrm{Eu}}^{3+}$ ions is limited by an efficient carrier trap that competes in energy transfer from the host material. For large pump fluences, the limited number of high-efficiency ${\mathrm{Eu}}^{3+}$ centers and the small excitation cross section of the majority ${\mathrm{Eu}}^{3+}$ centers limit the quantum efficiency. At low temperatures, under optimal excitation conditions, the external luminescence quantum efficiency reaches a value of 46%. These results show the high potential for this material as an efficient light emitter and demonstrate the importance of excitation conditions on the light-output efficiency.