Homo-epitaxial secondary growth of ZnO nanowire arrays for a UV-free warm white light-emitting diode application
2020; Optica Publishing Group; Volume: 59; Issue: 8 Linguagem: Inglês
10.1364/ao.385656
ISSN2155-3165
AutoresTanglei Zhang, Xianghui Zhang, Baoyu Ding, Jie Shen, Yongmin Hu, Haoshuang Gu,
Tópico(s)Ga2O3 and related materials
ResumoThe warm white homojunction light-emitting diode (LED) was fabricated by a doped ZnO nanowire array homojunction with homo-epitaxial secondary grown on a GaN substrate by the chemical vapor deposition method. Due to the high quality of the nanosized ZnO homojunction, the I-V characteristic curve of the ZnO homojunction shows good pn junction rectification characteristics, and the turn-on voltage is about 6 V. Under forward bias, bright yellow light was emitting from the homojunction LED. From the electroluminescence spectrum, the main luminescence peak is divided into a small part of blue light of about 420 nm and dominated yellow-green light of about 570 nm. The CIE color space chromaticity survey shows that the chromaticity coordinates of the homojunction LED are at (0.3358, 0.3341), which indicate that fabricated white LEDs have potential applications in efficient and healthy lighting and displaying fields.
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