Single-phase high-quality semipolar (10–13) AlN epilayers on m-plane (10–10) sapphire substrates
2020; Institute of Physics; Volume: 13; Issue: 3 Linguagem: Inglês
10.35848/1882-0786/ab7486
ISSN1882-0786
AutoresXu‐Qiang Shen, Kazutoshi Kojima, Hajime Okumura,
Tópico(s)Metal and Thin Film Mechanics
ResumoSingle-phase flat semipolar (10–13) AlN epilayers on m-plane (10–10) sapphire substrates grown by ammonia-free high-temperature metalorganic vapor phase epitaxy are firstly demonstrated. It is found that twins and basal-plane stacking faults are undetectable by X-ray diffraction and cross-sectional characterization. An X-ray rocking curve (XRC) shows the full widths at half maximum (FWHM) of the (10–13) and the (0002) diffraction peaks from a ∼2.3 μm thick AlN film as narrow as 322 and 373 arcsec, respectively, indicating a high structural quality. Semipolar AlN epilayers hold great promise for high performance deep-ultraviolet (DUV) optoelectronic device applications.
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