Enhancement of coercive field in atomically-thin quenched Fe 5 GeTe 2
2020; Institute of Physics; Volume: 13; Issue: 4 Linguagem: Inglês
10.35848/1882-0786/ab7f18
ISSN1882-0786
AutoresTomoharu Ohta, Kosuke Sakai, Hiroki Taniguchi, Benjamin Driesen, Yoshinori Okada, Kensuke Kobayashi, Yasuhiro Niimi,
Tópico(s)Graphene research and applications
ResumoWe have fabricated thin films of a van der Waals (vdW) ferromagnetic metal Fe5GeTe2 and characterized them by measuring the anomalous Hall effect. While the bulk Fe5GeTe2 does not exhibit a perpendicular magnetic anisotropy (PMA) unlike Fe3GeTe2, PMA emerges in the thin film devices. Furthermore, the PMA is enhanced with decreasing thickness of Fe5GeTe2. In particular, a thin film (5 unit-cell layer) device fabricated with Fe5GeTe2 quenched at 1050 K has two times larger coercive field than that prepared without quenching. Such a PMA should be useful for future vdW spintronic devices.
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