High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

2020; Wiley; Volume: 28; Issue: 4 Linguagem: Inglês

10.1002/jsid.888

ISSN

1938-3657

Autores

Ryo Yonebayashi, Kohei Tanaka, Kuniaki Okada, Kaoru Yamamoto, Keiichi Yamamoto, Seiichi Uchida, Tomohisa Aoki, Yujiro Takeda, Hiroaki Furukawa, Kazuatsu Ito, Hiromi Katoh, Wataru Nakamura,

Tópico(s)

ZnO doping and properties

Resumo

Abstract A pixel circuit and a gate driver on array for light‐emitting display are presented. By simultaneously utilizing top‐gate n‐type oxide and p‐type low‐temperature polycrystalline silicon (LTPS) thin‐film transistors (TFTs), the circuits provide high refresh rate and low power consumption. An active‐matrix LED (AMOLED) panel with proposed circuits is fabricated, and driving at various refresh rate ranging from 1 to 120 Hz could be achieved.

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