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Wafer bonding and epitaxial transfer of GaSb-based epitaxy to GaAs for monolithic interconnection of thermophotovoltaic devices

2004; Springer Science+Business Media; Volume: 33; Issue: 3 Linguagem: Inglês

10.1007/s11664-004-0182-y

1543-186X

C. A. Wang, D.A. Shiau, Peter G. Murphy, P. W. O’Brien, Robin Huang, Michael K. Connors, Allan Anderson, D. Donetsky, С. Г. Аникеев, Gregory Belenky, D. M. DePoy, G. Nichols,

Semiconductor Quantum Structures and Devices

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating (SI) GaAs handle wafers with SiOx/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovolatic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiOx/Ti/Au provides not only electrical isolation, but also high reflectivity and is used as an internal backsurface reflector (BSR). Characterization of wafer-bonded (WB) epitaxy by high-resolution x-ray diffraction (HRXRD) and time-decay photoluminescence (PL) indicates minimal residual stress and enhancement in optical quality. The 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A ten-junction device exhibited linear voltage building with an opencircuit voltage of 1.8 V.