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FTIR, Raman and XRD analysis of graphene oxide films prepared by modified Hummers method

2020; IOP Publishing; Volume: 1495; Issue: 1 Linguagem: Inglês

10.1088/1742-6596/1495/1/012012

1742-6596

G Surekha, Venkata Krishnaiah Kummara, N. Ravi, R. Padma Suvarna,

2D Materials and Applications

Abstract Graphene oxide (GO) is a promising material for energy storage device applications. Modified Hummers method (MHM) has been used to prepare GO films from graphite flakes by Sol-Gel method. With the aid of bridging agent dimethyldichlorosiline, structurally fine GO films were prepared. Fourier transform and infra-red (FTIR) spectrum of the GO thin film possesses absorption bands at 461, 594, 670, 803, 1020, 1243, 1457, 1544, 1627, 2850, 2926 and 3429 cm −1 . A sharp OH − absorption band was revealed at 3429 cm −1 . Two vibrational bands were noticed in the Raman spectrum for pure graphite flakes at 1578 and 2718 cm −1 . However, for GO, five Raman vibrational bands were unveiled at 413, 1344, 1597, 2697 and 2945 cm −1 . Among these bands, the mode at 1344 cm −1 was assigned to D-band and 1597 cm −1 was assigned to G-band. Compared to D-band, G-band was dominated for the GO films. Several times of centrifugation and ultra-sonication process have aided to obtain more intensity of G-band. In addition, 2D and D + G bands were also revealed in the GO films. X-ray diffraction (XRD) analysis was confirmed that a sharp peak at 10.64 degrees leads to the formation of GO thin film.