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Dual topological insulator device with disorder robustness

2020; American Physical Society; Volume: 102; Issue: 4 Linguagem: Inglês

10.1103/physrevb.102.045414

2469-9977

Bruno Focassio, Gabriel R. Schleder, Armando Pezo, Marcio Costa, A. Fazzio,

Quantum and electron transport phenomena

Two-dimensional ${\mathrm{Na}}_{3}\mathrm{Bi}$ is a dual topological insulator protected by time-reversal and mirror symmetry, resulting in a promising platform for device design. However, in reality, the design of topological devices is hindered by a sensitivity against disorder and temperature. We study the topological properties of ${\mathrm{Na}}_{3}\mathrm{Bi}$ in the presence of intrinsic defects, investigating the robustness of the edge states and the resulting transport properties. We apply a recursive Green's function technique enabling the study of disordered systems with lengths comparable to experimentally synthesized materials, in the order of micrometers. We combine our findings to propose a topological insulator device, where intrinsic defects are used to filter the response of trivial bulk states. This results in a stable conductance throughout a large range of electronic temperatures, and controllable by a perpendicular electric field. Our proposal is general, enabling the design of various dual topological insulator devices.