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HREM study of amorphization of CuTi irradiated by 1 MeV electron

1990; Cambridge University Press; Volume: 48; Issue: 4 Linguagem: Inglês

10.1017/s0424820100173753

2690-1315

Genbao Xu, Wen‐An Chiou, M. Meshii, P.R. Okamoto,

Thin-Film Transistor Technologies

Electron irradiation-induced amorphization of CuTi was studied by high resolution electron microscopy (HREM). Special attention was directed to correlate the spacial distribution of structural change from the perfect crystalline state to the complete amorphous state with the electron density distribution of the focussed beam which was used to amorphize the specimens. An alloy button of Cu-54 at % Ti was prepared by arc-melting and subsequently annealed at 1173K for three days. HREM samples were spark-cut and thinned by jet polishing. The samples were first examined in a Hitachi H 9000 HREM and selected for irradiation at 10K in a 1.2 MeV Kratos-AEl EM 7 high voltage electron microscope. The irradiation was carried out by a fully focused beam for which the electron density distribution was pre-determined. Finally, the irradiated samples were reexamined across the crystal/amorphous (C/A) boundary in the H 9000. The electron dose at the point of examination was estimated by carefully comparing the positions in HREM images with the interrupted position of bend contour in low magnification and utilizing the electron density distribution.