Capítulo de livro
BETA SILICON CARBIDE
1969; Elsevier BV; Linguagem: Inglês
10.1016/b978-0-08-006768-1.50014-0
Autores Tópico(s)Advanced ceramic materials synthesis
ResumoConditions are described for the growth of crystals and epitaxial layers of beta silicon carbide. Properties of such crystals are described and compared with those of alpha SiC. The question of the relative stability of alpha and beta SiC is discussed.
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