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Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

2020; Institute of Electrical and Electronics Engineers; Volume: 41; Issue: 12 Linguagem: Inglês

10.1109/led.2020.3029619

1558-0563

Sangwoo Han, Jianan Song, Sang Ha Yoo, Ziguang Ma, Robert M. Lavelle, David W. Snyder, Joan M. Redwing, Thomas N. Jackson, Rongming Chu,

Ga2O3 and related materials

This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.