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High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

2013; American Institute of Physics; Volume: 102; Issue: 4 Linguagem: Inglês

10.1063/1.4789365

1520-8842

Wenzhong Bao, Xinghan Cai, Dohun Kim, Karthik Sridhara, Michael S. Fuhrer,

ZnO doping and properties

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30–60 cm2/Vs, relatively independent of thickness (15–90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ∼50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.