Portal de Periódicos da CAPES

Rigorous FEM simulation of EUV masks: influence of shape and material parameters

2006; SPIE; Volume: 6349; Linguagem: Inglês

10.1117/12.686828

1996-756X

Jan Pomplun, Sven Burger, Frank Schmidt, Lin Zschiedrich, Frank Scholze, Christian Laubis, U. Dersch,

Electromagnetic Simulation and Numerical Methods

We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes. This gives us the opportunity to model geometrical structures accurately. Moreover we comment on the use of domain decomposition techniques for EUV mask simulations. Geometric mask parameters have a great influence on the diffraction pattern. We show that using accurate simulation tools it is possible to deduce the relevant geometrical parameters of EUV masks from scatterometry measurements. This work results from a collaboration between Advanced Mask Technology Center (AMTC, mask fabrication), Physikalisch-Technische Bundesanstalt (PTB, scatterometry), Zuse Institute Berlin (ZIB), and JCMwave (numerical simulation).