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Laser emission with excitonic gain in a ZnO planar microcavity

2011; American Institute of Physics; Volume: 98; Issue: 21 Linguagem: Inglês

10.1063/1.3593032

1520-8842

T. Guillet, Christelle Brimont, Pierre Valvin, B. Gil, T. Bretagnon, François Médard, M. Mihailovic, J. Zúñiga–Pérez, Mathieu Leroux, F. Sèmond, S. Bouchoule,

Semiconductor Quantum Structures and Devices

The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.