Portal de Periódicos da CAPES

Charged exciton emission at 1.3μm from single InAs quantum dots grown by metalorganic chemical vapor deposition

2005; American Institute of Physics; Volume: 87; Issue: 17 Linguagem: Inglês

10.1063/1.2093927

1520-8842

N. I. Cade, Hideki Gotoh, H. Kamada, Takehiko Tawara, Tetsuomi Sogawa, Hiroki Nakano, Hiroshi Okamoto,

Quantum Dots Synthesis And Properties

We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement.