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125 GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit

2017; Optica Publishing Group; Volume: 42; Issue: 24 Linguagem: Inglês

10.1364/ol.42.005090

1539-4794

Wenhao Jiang, Jianhong Liu, Yin Liu, Ge Jin, Jun Zhang, Jian-Wei Pan,

Semiconductor Quantum Structures and Devices

InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. The gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing the module size are important challenges for the design of such a detector system. Here we present for the first time, to the best of our knowledge, an InGaAs/InP SPD with 1.25 GHz sine wave gating (SWG) using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm×15 mm and implements the miniaturization of avalanche extraction for high-frequency SWG. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of the MIRC, and the SPD exhibits excellent performance with 27.5% photon detection efficiency, a 1.2 kcps dark count rate, and 9.1% afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.