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BIBTEX RIS

The graphene/n-Ge(110) interface: structure, doping, and electronic properties

2018; Royal Society of Chemistry; Volume: 10; Issue: 13 Linguagem: Inglês

10.1039/c8nr00053k

ISSN

2040-3372

Autores

Julia Tesch, Fabian Paschke, M. Fonin, Marko Wietstruk, Stefan Böttcher, Roland J. Koch, Aaron Bostwick, Chris Jozwiak, Eli Rotenberg, Anna A. Makarova, Beate Paulus, Elena Voloshina, Yuriy Dedkov,

Tópico(s)

Semiconductor materials and devices

Resumo

Synthesis temperature and substrate doping are key factors which determine the properties of graphene on semiconducting Ge(110).

Referência(s)