Portal de Periódicos da CAPES

Van der Waals epitaxial growth of topological insulator Bi2− x Sb x Te3− y Se y ultrathin nanoplate on electrically insulating fluorophlogopite mica

2014; American Institute of Physics; Volume: 105; Issue: 6 Linguagem: Inglês

10.1063/1.4892576

1520-8842

Ngoc Han Tu, Yoichi Tanabe, Khuong Kim Huynh, Yohei Sato, Hidetoshi Oguro, Satoshi Heguri, Kenji Tsuda, Masami Terauchi, Kazuo Watanabe, Katsumi Tanigaki,

2D Materials and Applications

We report the growth of high quality Bi2−xSbxTe3−ySey ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size, and the composition of the BSTS-NPs. Raman spectra showing systematic change indicate that the thicknesses and compositions of the BSTS-NPs are indeed accurately controlled. Electrical transport demonstrates a robust Dirac cone carrier transport in the BSTS-NPs. Since the BSTS-NPs provide superior dominant surface transport of the tunable Dirac cone surface states with negligible contribution of the conduction of the bulk states, the BSTS-NPs provide an ideal platform to explore intrinsic physical phenomena as well as technological applications of 3-dimensional topological insulators in the future.