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Model for crystallization kinetics: Deviations from Kolmogorov–Johnson–Mehl–Avrami kinetics

1999; American Institute of Physics; Volume: 75; Issue: 15 Linguagem: Inglês

10.1063/1.124965

1520-8842

Mario Castro, F. Domı́nguez-Adame, Ángel Sánchez, T. Rodrı́guez,

Material Dynamics and Properties

We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to certain degree of crystallinity of the amorphous phases during deposition, or more generally to impurities or roughness of the substrate.