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Flip-chip gate-tunable acoustoelectric effect in graphene

2018; American Institute of Physics; Volume: 124; Issue: 19 Linguagem: Inglês

10.1063/1.5047211

1520-8850

J. R. Lane, Linpeng Zhang, Mazin A. Khasawneh, Bowen Zhou, Erik Henriksen, J. Pollanen,

Surface and Thin Film Phenomena

We demonstrate a flip-chip device for performing low-temperature acoustoelectric measurements on exfoliated two-dimensional materials. With this device, we study gate-tunable acoustoelectric transport in an exfoliated monolayer graphene device, measuring the voltage created as high-frequency surface acoustic waves dynamically drive the graphene charge carriers, the density of which we simultaneously control with a silicon back-gate. We demonstrate ambipolar dependence of the acoustoelectric signal, as expected from the sign of the graphene charge carriers. We observe a marked reduction in the magnitude of the acoustoelectric signal over a well-defined range of density in the vicinity of charge neutrality, which we attribute to a spatially heterogeneous charge-disorder landscape not directly revealed by conventional transport measurements.