Artigo Acesso aberto Revisado por pares

Open-circuit voltage deficit in Cu2ZnSnS4 solar cells by interface bandgap narrowing

2018; American Institute of Physics; Volume: 113; Issue: 21 Linguagem: Inglês

10.1063/1.5063793

ISSN

1520-8842

Autores

Ji‐Sang Park, Sunghyun Kim, Samantha N. Hood, Aron Walsh,

Tópico(s)

Copper-based nanomaterials and applications

Resumo

There is evidence that interface recombination in Cu2ZnSnS4 solar cells contributes to the open-circuit voltage deficit. Our hybrid density functional theory calculations suggest that electron-hole recombination at the Cu2ZnSnS4/CdS interface is caused by a deeper conduction band that slows electron extraction. In contrast, the bandgap is not narrowed for the Cu2ZnSnSe4/CdS interface, consistent with a lower open-circuit voltage deficit.

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